Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems

.......................................................................................................................................... 5 KURZZUSAMMENFASSUNG ........................................................................................................... 6 INTRODUCTION................................................................................................................................. 7 CHAPTER 1: FLUCTUATION PHENOMENA IN SEMICONDUCTOR MATERIALS AND DEVICES ............................................................................................................................................. 11 1.1 GENERAL NOISE THEORY................................................................................................. 12 1.2. 1/F NOISE. ...................................................................................................................... 15 CHAPTER 2: LOWAND HIGH-FIELD TRANSPORT PROPERTIES OF ALGAN/GAN HETEROSTRUCTURES................................................................................................................... 21 2.1 SELF-HEATING AND HOT-ELECTRON EFFECTS IN ALGAN/GAN HETEROSTUCTURES. ...... 22 2.2 TWO-DIMENSIONAL ELECTRON DYNAMICS UNDER LOW AND HIGH ELECTRIC FIELD. ...... 29 CHAPTER 3: PROPERTIES OF 1/F NOISE IN ALGAN/GAN HETEROSTRUCTURES ...... 39 3.1 THE STUDY OF LOW-FREQUENCY NOISE PECULIARITIES OF THE ALGAN/GAN HEMTS.. 39 3.2 NOISE PROPERTIES OF BARRIER LAYER OF GAN-BASED HEMTS..................................... 52 CHAPTER 4: TRANSPORT AND NOISE PROPERTIES OF ALGAN HEMTS UNDER GAMMA IRRADIATION.................................................................................................................. 57 4.1 INVESTIGATION OF RADIATION HARDNESS OF ALGAN HEMTS...................................... 57 4.2 INFLUENCE OF GAMMA IRRADIATION ON LEAKAGE CURRENTS IN GAN-BASED HEMTS . 63 CHAPTER 5: PHASE NOISE STUDY OF AN ALGAN/GAN HEMT X-BAND OSCILLATOR ............................................................................................................................................................... 70 5.1 FABRICATION AND DESIGN .............................................................................................. 70 5.2 MEASUREMENT TECHNIQUE ............................................................................................ 73 5.3 LOW FREQUENCY NOISE RESULTS.................................................................................... 74 5.4 UP-CONVERSION OF LOW FREQUENCY NOISE TO THE PHASE NOISE OF THE OSCILLATOR.. 75 CHAPTER 6: CONCLUSION AND OUTLOOK............................................................................ 79 APPENDIX .......................................................................................................................................... 83 ACKNOWLEDGEMENTS................................................................................................................ 89 PUBLICATIONS ................................................................................................................................ 90 SPECIAL THANKS............................................................................................................................ 93 REFERENCES .................................................................................................................................... 95